基本信息:
- 专利标题： 化合物半導體基板、化合物半導體基板的製造方法及發光元件
- 专利标题（英）：Compound semiconductor substrate, method for producing compound semiconductor substrate, and light-emitting element
- 专利标题（中）：化合物半导体基板、化合物半导体基板的制造方法及发光组件
- 申请号：TW101105825 申请日：2012-02-22
- 公开(公告)号：TW201240106A 公开(公告)日：2012-10-01
- 发明人： 高橋雅宣 , 酒井健滋 , 池田淳 , 篠原政幸
- 申请人： 信越半導體股份有限公司
- 申请人地址： SHIN-ETSU HANDOTAI CO., LTD. 日本 JP
- 专利权人： 信越半導體股份有限公司
- 当前专利权人： 信越半導體股份有限公司
- 当前专利权人地址： SHIN-ETSU HANDOTAI CO., LTD. 日本 JP
- 代理人： 蔡坤財; 李世章
- 优先权： 日本 2011-052079 20110309
- 主分类号： H01L
- IPC分类号： H01L
The present invention is a compound semiconductor substrate having at least: an n-type cladding layer comprising (AlxGa1-x)yIn1-y on an n-type GaP window layer; and a quaternary light-emitting layer wherein an active layer and a p-type cladding layer are sequentially laminated. A p-type GaP layer, which is a current diffusion layer, is laminated on the quaternary light-emitting layer on the primary surface (first primary surface) at the reverse side of the primary surface (second primary surface) on the n-type GaP window layer side. The compound semiconductor substrate is characterized by an impurity diffusion suppression layer comprising (Alx"Ga1-x")y"In1-y"P (where 0 < x" < x < 1 and 0 < y" < 1) having a lower Al content than the n-type cladding layer being formed between the n-type GaP window layer and the quaternary light-emitting layer. As a result, provided is a compound semiconductor substrate able to suppress deterioration of use life characteristics with respect to forward voltage by means of suppressing an increase in forward voltage when impurities such as oxygen and carbon arise and are electrified at the join interface between the quaternary light-emitting layer and a GaP substrate.