基本信息:
- 专利标题： 一種製造與測試半導體晶圓的方法 METHOD FOR FABRICATING AND TESTING SEMICONDUCTOR WAFER
- 专利标题（英）：Method for fabricating and testing semiconductor wafer
- 专利标题（中）：一种制造与测试半导体晶圆的方法 METHOD FOR FABRICATING AND TESTING SEMICONDUCTOR WAFER
- 申请号：TW096146006 申请日：2007-12-04
- 公开(公告)号：TW200826170A 公开(公告)日：2008-06-16
- 发明人： 林茂雄 LIN, MOU SHIUNG , 林世雄 LIN, SHIH HSIUNG
- 申请人： 米輯電子股份有限公司 MEGICA CORPORATION
- 申请人地址： 新竹市新竹科學工業園區園區二路47號301/302室
- 专利权人： 米輯電子股份有限公司 MEGICA CORPORATION
- 当前专利权人： 米輯電子股份有限公司 MEGICA CORPORATION
- 当前专利权人地址： 新竹市新竹科學工業園區園區二路47號301/302室
- 优先权： 美國 60/868,353 20061204
- 主分类号： H01L
- IPC分类号： H01L ; G01R
A method for fabricating and testing a wafer includes forming metal traces with metal pads, wherein forming the metal traces include forming a TiW layer on a passivation layer and on pads, next forming a seed layer on the TiW layer, next forming a photoresist layer on the seed layer, next forming a metal layer on the seed layer exposed by openings in the photoresist layer, next removing the photoresist layer, next removing the seed layer not under the metal layer, and then etching the TiW layer not under the metal layer with an etchant containing H2O2 at a temperature of between 35 and 50 DEG C, or with an etchant containing H202 and with ultrasonic waves applied to the etchant, next contacting probe tips of a probe card with some of the metal pads, next cleaning the probe tips until repeating the step of contacting the probe tips with some of the metal pads at greater than 100 times, and then after cleaning the probe tips, repeating the step of contacting the probe tips with some of the metal pads.