基本信息:
- 专利标题： 氮化物半導體發光元件
- 专利标题（英）：Nitride semiconductor light-emitting element
- 专利标题（中）：氮化物半导体发光组件
- 申请号：TW095144224 申请日：2006-11-29
- 公开(公告)号：TW200735420A 公开(公告)日：2007-09-16
- 发明人： 尺田幸男 SHAKUDA, YUKIO
- 申请人： 羅姆股份有限公司 ROHM CO., LTD.
- 申请人地址： 日本
- 专利权人： 羅姆股份有限公司 ROHM CO., LTD.
- 当前专利权人： 羅姆股份有限公司 ROHM CO., LTD.
- 当前专利权人地址： 日本
- 代理人： 林志剛
- 优先权： 日本 2005-343963 20051129
- 主分类号： H01L
- IPC分类号： H01L
A nitride semiconductor light-emitting element exhibiting high internal quantum efficiency by accelerating recombination light emission while employing such a multiple quantum well structure wherein a well layer has a relatively large thickness. The nitride semiconductor light-emitting element is equipped with a multiple quantum well structure having a nitride semiconductor layer portion (6) including an active layer (4) for forming at least a light emitting portion on a substrate (1), wherein the active layer is formed by laying well layers (7) composed of InxGa1-xN (0 < x ≤ 1) and barrier layers (8) composed of AlyInzGa1-y-zN (0 ≤ y < 1, 0 ≤ z < 1, 0 ≤ y+z < 1, z < x) alternately. The well layer is divided at least into a first well layer (7a) and a second well layer (7b) by a thin film barrier layer (7c) which is composed of AlvInwGa1-v-wN (0 ≤ v < 1, 0 ≤ w < 1, 0 ≤ v+w < 1, w < x) and formed to have a thickness not less than one atomic layer and not more than 20AA.