基本信息:
- 专利标题： 遮罩式唯讀記憶體結構之製造方法 METHOD OF MANUFACTURING MASK ROM
- 专利标题（英）：Method of manufacturing mask ROM
- 专利标题（中）：遮罩式唯读内存结构之制造方法 METHOD OF MANUFACTURING MASK ROM
- 申请号：TW094124776 申请日：2005-07-21
- 公开(公告)号：TW200705613A 公开(公告)日：2007-02-01
- 发明人： 湯莉蘭 TANG, LI LAN , 羅琇方 LO, SHIU FANG , 周崇勳 JOU, CHOU SHIN
- 申请人： 台灣茂矽電子股份有限公司 MOSEL VITELIC INC.
- 申请人地址： 新竹市科學工業園區研新一路1號
- 专利权人： 台灣茂矽電子股份有限公司 MOSEL VITELIC INC.
- 当前专利权人： 台灣茂矽電子股份有限公司 MOSEL VITELIC INC.
- 当前专利权人地址： 新竹市科學工業園區研新一路1號
- 代理人： 王麗茹; 曾國軒
- 主分类号： H01L
- IPC分类号： H01L
A method of manufacturing mask ROM is disclosed. The method includes steps of (a) providing a substrate having plural gate structures thereon; (b) forming a first oxide layer for covering the substrate and the plural gate structures; (c) forming a mask layer with a ROM opening on the first oxide layer; (d) executing an implantation via the ROM opening; (e) removing the mask layer and exposing the first oxide layer; (f) forming a second oxide layer on the first oxide layer; (g) partially etching away the second oxide layer and the first oxide layer for forming a contacting opening on the surface of the substrate; and (h) forming a metal layer on the contacting opening, thereby obtaining the mask ROM. The manufacturing method can effectively prevent the gate structure from being damaged and avoid the metal line being short.
公开/授权文献:
- TWI269410B 遮罩式唯讀記憶體結構之製造方法 METHOD OF MANUFACTURING MASK ROM 公开/授权日：2006-12-21