A composition for resist underlayer film formation comprising a compound represented by the following formula (1) and a silicon containing compound:        [L_xTe(OR¹)_y]     (1)(In formula (1), L is a ligand other than OR¹; R¹ is any of a hydrogen atom, a substituted or unsubstituted linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; the sum of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of R¹ may be the same or different.)