Method for producing a thin film resistor after completing the copper chemical mechanical polishing (CMP) process on the copper process module, the method comprising depositing the at least two structures (90a, 90b) across the dielectric barrier layer 100; The step of depositing a second dielectric layer 110 as a hard mask on the dielectric barrier; Patterning a trench by using the photolithography; Etching the trench through the hard mask, and stops on the inside of the dielectric barrier or dielectric barrier; Removing any remaining photoresist (120a, 120b) from a photolithography process; Exposing the at least two copper structure of each of the copper surface by etching the trench through the dielectric barrier; And it is disclosed that includes the step of depositing the thin film resistor material (120) in the trench and cross-linking across the at least two exposed copper surface produced as a result.