基本信息:
- 专利标题： 전자 빔 노광 시스템을 위한 미세 정렬 시스템
- 专利标题（英）：Fine alignment system for an electron beam exposure system
- 专利标题（中）：电子束曝光系统的微调系统
- 申请号：KR1020177026266 申请日：2015-09-18
- 公开(公告)号：KR1020170141653A 公开(公告)日：2017-12-26
- 发明人： 보로도브스키,얀에이.
- 申请人： 인텔 코포레이션
- 申请人地址： **** Mission College Boulevard, Santa Clara, California *****, U.S.A.
- 专利权人： 인텔 코포레이션
- 当前专利权人： 인텔 코포레이션
- 当前专利权人地址： **** Mission College Boulevard, Santa Clara, California *****, U.S.A.
- 代理人： 양영준; 김연송; 백만기
- 优先权： US62/150,728 2015-04-21
- 国际申请： PCT/US2015/051031 2015-09-18
- 国际公布： WO2016171754 2016-10-27
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/027 ; H01L21/033 ; H01L21/311 ; H01J37/304 ; H01J37/317
And methods that involve such a lithographic apparatus suitable for lithographic a complementary e-beam lithography (CEBL) they are described. In the example, e-beam and micro-alignment of the tool includes the step of moving the wafer in the Y direction while projecting an electronic image of the plurality of apertures in the X-direction alignment features over e-beam column of the wafer. The method comprises the steps of detecting the time of the decomposition and back-scattered electrons (BSE) detection response waveform during the projection also. The method also includes determining the X position of all edges of all features in the X-direction alignment feature by calculating the derivative of the BSE detection response waveform. The method includes the step of adjusting the alignment of the e-beam column for after determining the X position of all edges of all features in the X-direction alignment features, the wafer also.