发明公开
KR1020170038017A 질소 도핑 및 공공 지배 실리콘 잉곳 및 그로부터 형성된, 반경방향으로 균일하게 분포된 산소 석출 밀도 및 크기를 갖는 열 처리 웨이퍼
审中-实审
基本信息:
- 专利标题： 질소 도핑 및 공공 지배 실리콘 잉곳 및 그로부터 형성된, 반경방향으로 균일하게 분포된 산소 석출 밀도 및 크기를 갖는 열 처리 웨이퍼
- 专利标题（英）：Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
- 专利标题（中）：氮掺杂并且公开控制的硅锭和具有径向均匀分布的氧沉淀密度和尺寸的热处理晶片
- 申请号：KR1020177005228 申请日：2015-07-29
- 公开(公告)号：KR1020170038017A 公开(公告)日：2017-04-05
- 发明人： 사만타,가우라브 , 루,체-웨이 , 차이,펑-치엔 , 루,정
- 申请人： 썬에디슨 세미컨덕터 리미티드
- 申请人地址： * Battery Road #**-**, Straits Trading Building, Singapore
- 专利权人： 썬에디슨 세미컨덕터 리미티드
- 当前专利权人： 썬에디슨 세미컨덕터 리미티드
- 当前专利权人地址： * Battery Road #**-**, Straits Trading Building, Singapore
- 代理人： 양영준; 백만기
- 优先权： US62/031,203 2014-07-31
- 国际申请： PCT/US2015/042714 2015-07-29
- 国际公布： WO2016019051 2016-02-04
- 主分类号： C30B15/04
- IPC分类号： C30B15/04 ; C30B29/06 ; C30B15/20 ; C30B33/02 ; H01L21/02 ; H01L29/167
Subsequent epitaxial and nitrogen to provide a heat treatment the wafer has a substantially oxide precipitate density and size, uniformly distributed in the radial direction showing a lack of a significant edge effects - a doped CZ silicon crystal ingot and from the sliced wafer is disclosed . A method for producing such a CZ silicon crystal ingot by controlling the pulling rate, temperature gradient, and the nitrogen concentration from the molten silicon is also provided. A nitrogen-doped CZ method for simulating the radial bulk micro defect size distribution of the heat treatment subsequent epitaxial wafer sliced from the silicon crystal, the radial bulk micro defect density distribution and the oxygen precipitate density distribution is also provided.