基本信息:
- 专利标题： 공간적으로 맞춰진 저항률을 갖는 이온 저항성 이온 투과성 엘리먼트의 사용을 통한 금속들의 전착을 위한 장치 및 방법
- 专利标题（英）：Apparatus and method for electodeposition of metals with use of an ionically resistive ionically permeable element having spatially tailored resistivity
- 专利标题（中）：使用具有空间定位电阻的离子电离透性元素的金属选择的装置和方法
- 申请号：KR1020160057962 申请日：2016-05-12
- 公开(公告)号：KR1020160134532A 公开(公告)日：2016-11-23
- 发明人： 카가즈왈라부르하누딘 , 버칼루브라이언엘. , 추아리펭 , 베르케아론 , 래쉬로버트 , 메이어스티븐티.
- 申请人： 램 리써치 코포레이션
- 申请人地址： 미국 ***** 캘리포니아주 프레몬트 쿠싱 파크웨이 ****
- 专利权人： 램 리써치 코포레이션
- 当前专利权人： 램 리써치 코포레이션
- 当前专利权人地址： 미국 ***** 캘리포니아주 프레몬트 쿠싱 파크웨이 ****
- 代理人： 특허법인인벤투스
- 优先权： US14/712,553 2015-05-14
- 主分类号： H01L21/288
- IPC分类号： H01L21/288 ; H01L21/67 ; H01L21/768 ; H01L21/265 ; H01L21/3063
In the apparatus, an aspect to having improved coating uniformity of the electric metal plating on a semiconductor substrate, the plating chamber configured to contain the electrolyte and the anode; A substrate holder configured to hold a semiconductor substrate; And substantially comprising an ion-resistant ion-permeable element comprising a surface which is a surface and the opposite facing a flat substrate, and ion-resistant ion-permeable element to flow towards causing the substrate to the ion current during the electroplating, ion-resistant ion-permeable element It includes having a local variation resistivity region. The resistivity of the ion-resistant ion-permeable element in one example is change as the thickness of the ion-resistant ion-permeable element changes. In some embodiments, the thickness of ion-resistant ion-transmitting element is reduced to a radial direction from the center to the edge of an ion-resistant ion-permeable element gradually. It provided an apparatus and method are particularly useful in order to post the metal within the WLP recessed features plating.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/283 | .....用于电极的导电材料或绝缘材料的沉积 |
| ------------------H01L21/288 | ......液体的沉积，例如，电解沉积 |