基本信息:
- 专利标题： 복수의 도금 관통 반도체 소자를 위한 개선된 디스크형 사이리스터
- 专利标题（英）：Improved disc-shaped thyristor for a plurality of plated-through semiconductor components
- 专利标题（中）：用于多层次的半导体器件的改进的片状晶体管
- 申请号：KR1020167026106 申请日：2015-02-17
- 公开(公告)号：KR1020160127051A 公开(公告)日：2016-11-02
- 发明人： 슈헹크,마리오 , 프리지빌라,젠스 , 바텔메스,라이너 , 돈,요르크
- 申请人： INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG , 지멘스 악티엔게젤샤프트
- 申请人地址： Max-Planck-Str. * ***** Warstein, Germany
- 专利权人： INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG,지멘스 악티엔게젤샤프트
- 当前专利权人： INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG,지멘스 악티엔게젤샤프트
- 当前专利权人地址： Max-Planck-Str. * ***** Warstein, Germany
- 代理人： 허용록
- 优先权： DE10 2014 102 4931 2014-02-26
- 国际申请： PCT/EP2015/053289 2015-02-17
- 国际公布： WO2015128220 2015-09-03
- 主分类号： H01L25/11
- IPC分类号： H01L25/11 ; H01L23/051 ; H01L23/473 ; H01L23/00
The present invention relates to a disc-shaped thyristor (1) for pressure-contacting the plurality of semiconductor devices using a clamping means (4, 13) for generating a clamping force (F), this disc-shaped thyristor housing (2, 3 , 7, 8), at least one first semiconductor element (6) of the first structure accommodated in the housing, it is accommodated in the housing and including at least one second semiconductor element (5) different from the first structure and the first structure a housing (2, 3, 7, 8) are arranged at right angles to the first and the second for the clamping of the two semiconductor elements 1, 6 and the second (5) substantially in the clamping force of a semiconductor element surrounding (F) at least one of the metal pressure, and the pressure plate (2) comprises a plate (2) is formed so as to act the clamping force (F) is restricted locally to the pressure plate 9, via the pressure plate (2) the 1 (6) and second (5) and the semiconductor element is clamped, a first semiconductor element (6) is clamped (F) is placed under local action area (9), a second semiconductor device (5) is at least partially disposed outside of the local action area (9).
公开/授权文献:
- KR101855028B1 복수의 도금 관통 반도체 소자를 위한 개선된 디스크형 사이리스터 公开/授权日：2018-05-04
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
| --------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件，例如整流二极管的组装件 |
| ----------H01L25/04 | ..不具有单独容器的器件 |
| ------------H01L25/11 | ...包含在H01L29/00组类型的器件 |