基本信息:
- 专利标题： 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
- 专利标题（英）：Plasma processing apparatus, plasma processing method, and storage medium,
- 专利标题（中）：等离子体加工设备等离子体处理方法和储存介质
- 申请号：KR1020160035390 申请日：2016-03-24
- 公开(公告)号：KR1020160117221A 公开(公告)日：2016-10-10
- 发明人： 미우라,시게히로 , 고바야시,다케시 , 스가와라,가츠아키 , 이토,나오히데
- 申请人： 도쿄엘렉트론가부시키가이샤
- 申请人地址： *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 专利权人： 도쿄엘렉트론가부시키가이샤
- 当前专利权人： 도쿄엘렉트론가부시키가이샤
- 当前专利权人地址： *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 代理人： 장수길; 성재동
- 优先权： JPJP-P-2015-069570 2015-03-30
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; G01N21/25 ; G01N21/68 ; G01J3/02 ; G01J3/443
The present invention relates to a device for revolution while the plasma processing a wafer (W) by a rotating table (2), and reliably detect the ignition of the plasma in the plasma generating region is bright by the light of the heater unit 7, . Installing the transmission window 300, on the ceiling of the vacuum chamber (1), and detects light in the plasma generating region of the lower side of the transmission window 300 by optical detector 301. And R, G, obtaining the respective rates of the R, G, B to the sum of the respective light intensity of B, also the sum of them to obtain the rate of change of the percentages of the before and after supplying a high-frequency power to the antenna 83, the value and as the evaluation value, the evaluation value is compared with a threshold value, the ignition taking place in the evaluation value is greater than the threshold plasma, if the evaluation value is less than the threshold value and determines that the ignition of the plasma occurs.
公开/授权文献:
- KR101933272B1 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 公开/授权日：2018-12-27