基本信息:
- 专利标题： 박막 트랜지스터 어레이 기판의 제조방법
- 专利标题（英）：Method for manufacturing thin film transistor array substrate
- 专利标题（中）：制造薄膜晶体管阵列基板的方法
- 申请号：KR1020167006845 申请日：2013-10-17
- 公开(公告)号：KR1020160044007A 公开(公告)日：2016-04-22
- 发明人： 왕,쥔
- 申请人： 센젠 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드
- 申请人地址： No. *-*, Tangming Rd., Guangming New District, Shenzhen City Guangdong Province P.R.China
- 专利权人： 센젠 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드
- 当前专利权人： 센젠 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드
- 当前专利权人地址： No. *-*, Tangming Rd., Guangming New District, Shenzhen City Guangdong Province P.R.China
- 代理人： 특허법인 티앤아이
- 优先权： CN2013104625248 2013-09-30
- 国际申请： PCT/CN2013/085364 2013-10-17
- 国际公布： WO2015043008 2015-04-02
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L27/12 ; H01L29/66 ; H01L29/417 ; H01L29/786 ; H01L21/02 ; H01L21/441 ; H01L21/477
Provides a method of manufacturing a TFT array substrate, the TFT array substrate is manufactured with a top gate structure, and wherein the thin film transistor array panel TFT (Thin Film Transistor) array substrate through the manufacturing method is three times masking, of which indium gallium zinc oxide by preparing a thin film transistor in the thin film transistor array substrate significant improvement in the charge rate of the pixel electrode of the thin film transistor and, by improving the response speed of the pixels, it is possible to implement a more rapid refresh rate, fast response speed due to the row scanning rate of pixels it is be too fast, the ultra-high resolution made possible in a thin film transistor liquid crystal display. At the same time, the manufacturing method is three masking process and can significantly reduce the number of production steps by using only, shorten the processing time, it is possible to reduce the production cost effectively, increasing the production efficiency is increased production capacity.
公开/授权文献:
- KR101788488B1 박막 트랜지스터 어레이 기판의 제조방법 公开/授权日：2017-10-19
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/41 | ..以其形状、相对尺寸或位置为特征的 |
| ------------H01L29/423 | ...不通有待整流、放大或切换电流的 |