基本信息:
- 专利标题： 웨이퍼들의 영구적 결합을 위한 방법
- 专利标题（英）：Method for the permanent bonding of wafers
- 专利标题（中）：永久粘结方法
- 申请号：KR1020157034723 申请日：2011-01-25
- 公开(公告)号：KR1020150142075A 公开(公告)日：2015-12-21
- 发明人： 플라흐,토마스 , 힝얼,쿠르트 , 빔프링어,마르쿠스 , 플뢰트겐,크리스토프
- 申请人： 에베 그룹 에. 탈너 게엠베하
- 申请人地址： DI Erich Thallner Straße *, A-**** St. Florian am Inn (Austria)
- 专利权人： 에베 그룹 에. 탈너 게엠베하
- 当前专利权人： 에베 그룹 에. 탈너 게엠베하
- 当前专利权人地址： DI Erich Thallner Straße *, A-**** St. Florian am Inn (Austria)
- 代理人： 강명구; 김현석
- 国际申请： PCT/EP2011/000299 2011-01-25
- 国际公布： WO2012100786 2012-08-02
- 主分类号： H01L21/18
- IPC分类号： H01L21/18 ; H01L21/70 ; H01L21/20 ; H01L21/762
The present invention relates to the bonding method of the step in particular, to the first contact surface 3 of the first substrate coupling the second contact surface 4 of the second substrate (2) in accordance with the sequence,
- forming a reservoir (5) in the surface layer (6) on the first contact surface (3),
- the step of at least partially filling the reservoir (5) in the first extract or extracts of the first group,
The method comprising the second contact surface 4 and the first contact surface (3) contact to form a pre-engagement connection,
- a permanent bond is enhanced by the reaction of said first and said second extract from the first extract contained situated between the two contact surfaces (3, 4) in the reaction layer 7 of the second substrate (2) a characterized in that it comprises forming.
公开/授权文献:
- KR101810310B1 웨이퍼들의 영구적 결합을 위한 방법 公开/授权日：2017-12-18
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |