基本信息:
- 专利标题： 트랜지스터, 트랜지스터의 제조 방법 및 트랜지스터를 포함하는 전자장치
- 专利标题（英）：Transistor, method for fabricating the same and electronic device including the same
- 专利标题（中）：晶体管，其制造方法和包括其的电子器件
- 申请号：KR1020140027940 申请日：2014-03-10
- 公开(公告)号：KR1020150105858A 公开(公告)日：2015-09-18
- 发明人： 차재춘 , 진승우 , 이안배 , 장일식
- 申请人： 에스케이하이닉스 주식회사
- 申请人地址： 경기도 이천시 부발읍 경충대로 ****
- 专利权人： 에스케이하이닉스 주식회사
- 当前专利权人： 에스케이하이닉스 주식회사
- 当前专利权人地址： 경기도 이천시 부발읍 경충대로 ****
- 代理人： 특허법인신성
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/336
This technique is intended to provide a transistor and its manufacturing method capable of improving the on-current at the same time to suppress a short channel effect and the transistor manufacturing method according to the present technology includes the steps of forming a gate structure on a substrate; Comprising: a first implant species in the cold in the substrate using the gate structure as a mask to form a source / drain extension region of the first conductivity type; The implant comprising: a second chemical species at elevated temperatures to form a halo region of a second conductivity type opposite that of the source / drain extension regions; And it can include a third implant species to form the source / drain region of the first conductivity type having a depth deeper than the source / drain extension regions.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/263 | .....带有高能辐射的 |
| ------------------H01L21/265 | ......产生离子注入的 |