基本信息:
- 专利标题： 소자, 및 막의 제작 방법
- 专利标题（英）：Element and formation method of film
- 专利标题（中）：电影的元素和形成方法
- 申请号：KR1020140169580 申请日：2014-12-01
- 公开(公告)号：KR1020150063936A 公开(公告)日：2015-06-10
- 发明人： 야마자키순페이 , 오구니데페이 , 오기노기요후미 , 이케다히사오
- 申请人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 申请人地址： 일본국 가나가와켄 아쓰기시 하세 ***
- 专利权人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人地址： 일본국 가나가와켄 아쓰기시 하세 ***
- 代理人： 장훈
- 优先权： JPJP-P-2013-249210 2013-12-02; JPJP-P-2013-249212 2013-12-02; JPJP-P-2014-121142 2014-06-12
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; C01B31/04 ; H01L21/28
[PROBLEMS] provides a novel device. Alternatively, the film provides a novel manufacturing method. Or, it provides a novel method for producing the device. Or so, to produce film comprising a pin with low cost and high yield.
[Challenge] to have a separate second electrode from the first electrode and the first electrode, the first electrode and the second electrode comprises a pin yes. Alternatively, the first step of oxidation graphene contained oxide yes film comprising a pin on the membrane and a second step of oxidation of graphene that is immersed in a solution of an acid to produce a film containing an oxide of graphene on a substrate after the third step of reduction, yes it fabricated film comprising a pin. In addition, the selectively removed by reduction before the graphene oxide contained in the film including the graphene oxide, a film containing an oxide of graphene photolithography.
公开/授权文献:
- KR102321558B1 소자, 및 막의 제작 방법 公开/授权日：2021-11-05
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/3205 | ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层（器件内部的通电装置入H01L23/52）；这些层的后处理 |