基本信息:
- 专利标题: 메모리 컨트롤러 및 그것의 동작 방법
- 专利标题(英):Memory controller and the method of operation thereof
- 专利标题(中):存储器控制器及其操作方法
- 申请号:KR1020130101223 申请日:2013-08-26
- 公开(公告)号:KR1020150024141A 公开(公告)日:2015-03-06
- 发明人: 설창규 , 공준진 , 소혜정 , 손홍락
- 申请人: 삼성전자주식회사
- 申请人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人: 삼성전자주식회사
- 当前专利权人: 삼성전자주식회사
- 当前专利权人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人: 특허법인 고려
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C16/06
A memory controller including a shaping state engine that performs the shaping operation state to improve the reliability of the nonvolatile memory device is provided. The memory controller MLC non-volatile memory device for driving a state-shaping map information provided by the change interval information of data to be programmed ram, and, state assay according to ping the mapping information, the original data to be provided to the MLC non-volatile memory device programs and a state-shaping encoder to change the state. State shaping encoder reduces the number of data that corresponds to the top-level program of the state data to be programmed. And shaping state mapping information includes a logical page curl section of the MLC nonvolatile memory device to change the data.
公开/授权文献:
- KR102149770B1 메모리 컨트롤러 및 그것의 동작 방법 公开/授权日:2020-08-31
信息查询:
EspacenetIPC结构图谱:
G | 物理 |
--G11 | 信息存储 |
----G11C | 静态存储器 |
------G11C16/00 | 可擦除可编程序只读存储器 |
--------G11C16/02 | .电可编程序的 |
----------G11C16/06 | ..辅助电路,例如,用于写入存储器的 |
------------G11C16/34 | ...编程状态的确定,例如,阈值电压、过编程或欠编程、保留 |