基本信息:
- 专利标题： 저항성 랜덤 억세스 메모리 소자를 제조하는 방법
- 专利标题（英）：Method of making a resistive random access memory device
- 专利标题（中）：制造电阻随机访问存储器件的方法
- 申请号：KR1020140090927 申请日：2014-07-18
- 公开(公告)号：KR1020150010650A 公开(公告)日：2015-01-28
- 发明人： 시에치 , 마스얀빌럼 , 블롬베르그톰 , 투오미넨마르코 , 하우카수비 , 룰로프스로빈 , 우드루프제이콥
- 申请人： 에이에스엠 아이피 홀딩 비.브이.
- 申请人地址： Versterkerstraat *, **** AP Almere, The Netherlands
- 专利权人： 에이에스엠 아이피 홀딩 비.브이.
- 当前专利权人： 에이에스엠 아이피 홀딩 비.브이.
- 当前专利权人地址： Versterkerstraat *, **** AP Almere, The Netherlands
- 代理人： 리앤목특허법인
- 优先权： US61/856,605 2013-07-19; US61/975,578 2014-04-04
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L27/115
This technology is disclosed as related to a field of semiconductor processing, and more particularly to a method of manufacturing a resistive random access memory with such a memory. In one version, and the manufacturing method comprises the steps of providing a first electrode on the substrate includes providing a substrate. The method further includes the step of depositing on the first electrode atomic layer deposition a resistive switching material above. The resistive switching material comprises an oxide containing a nick togen selected from the group consisting of As, Bi, Sb and P. The resistive switching material is, for example, with antimony Sb, or may be doped with a metal alloy. On top of the resistive switching material can have a second electrode in contact with the resistive switching material it can be formed.
公开/授权文献:
- KR101989926B1 저항성 랜덤 억세스 메모리 소자를 제조하는 방법 公开/授权日：2019-06-17
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |
| ----------------------H01L21/8239 | ........存储器结构 |
| ------------------------H01L21/8246 | .........只读存储器结构（ROM） |
| --------------------------H01L21/8247 | ..........电可编程序的 |