基本信息:
- 专利标题: 수직형 갈륨나이트라이드 트랜지스터의 제조방법
- 专利标题(英):Method of fabricating vertical GaN transister
- 专利标题(中):制造垂直放大透镜的方法
- 申请号:KR1020130081623 申请日:2013-07-11
- 公开(公告)号:KR1020150007547A 公开(公告)日:2015-01-21
- 发明人: 타케야모토노부 , 이관현 , 곽준식 , 정영도 , 이강녕
- 申请人: 서울반도체 주식회사
- 申请人地址: 경기도 안산시 단원구 산단로***번길 **-** (원시동)
- 专利权人: 서울반도체 주식회사
- 当前专利权人: 서울반도체 주식회사
- 当前专利权人地址: 경기도 안산시 단원구 산단로***번길 **-** (원시동)
- 代理人: 특허법인에이아이피
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/78
Method of manufacturing a vertical-type gallium nitride (GaN) based transistor, a first gallium nitride (GaN) and forming a mask layer patterned on the layer, the layer of the first gallium nitride (GaN) exposed by the mask layer pattern comprising the steps of: over to form a second gallium nitride (GaN) layer, the second gallium nitride (GaN) and forming a third gallium nitride (GaN) layer on the layer, and the third gallium nitride (GaN) layer comprising the steps of: over to form a fourth gallium nitride (GaN) layer, the fourth gallium nitride (GaN) and forming a current blocking layer pattern on the layer, the current blocking layer pattern and a fourth gallium nitride (GaN) layer in and forming a fifth step and gallium, and a fifth gallium nitride (GaN) of claim 6, gallium nitride (GaN) layer on the layer to form a nitride (GaN) layer on the exposed surface.
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/335 | .....场效应晶体管 |
------------------H01L21/336 | ......带有绝缘栅的 |