基本信息:
- 专利标题： 반도체 조립체 및 그 제조 방법
- 专利标题（英）：Semiconductor assembly and method of manufacture
- 专利标题（中）：半导体装配及其制造方法
- 申请号：KR1020140079461 申请日：2014-06-27
- 公开(公告)号：KR1020150002520A 公开(公告)日：2015-01-07
- 发明人： 카샵애비나쉬스리크리시난 , 샌드빅피터미카 , 조우뤼
- 申请人： 제네럴 일렉트릭 컴퍼니
- 申请人地址： * RIVER ROAD, SCHENECTADY, NEW YORK *****, USA
- 专利权人： 제네럴 일렉트릭 컴퍼니
- 当前专利权人： 제네럴 일렉트릭 컴퍼니
- 当前专利权人地址： * RIVER ROAD, SCHENECTADY, NEW YORK *****, USA
- 代理人： 김태홍; 김진회
- 优先权： US13/931,363 2013-06-28
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/16 ; H01L29/86
The integrated semiconductor assembly is provided with a mono Lee formally. Mono Lee and integrated with the semiconductor assembly formally comprises a gallium nitride (GaN) semiconductor devices fabricated on the substrate, and the substrate comprises silicon carbide (SiC). The semiconductor assembly further comprises at least one transient voltage suppression (TVS) structures fabricated on the substrate or within the substrate, and the TVS structure is in electrical contact with the GaN semiconductor devices. When GaN is applied across the semiconductor device voltage greater than the threshold voltage, the TVS structure is configured to operate with the punch-through mode, the avalanche mode, or a combination thereof. Also provided is a method of manufacturing the semiconductor integrated assembly as mono Lee formally.
公开/授权文献:
- KR101654975B1 반도체 조립체 및 그 제조 방법 公开/授权日：2016-09-06
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/778 | .....带有二维载流子气沟道的，如HEMT |