基本信息:
- 专利标题: 트렌치 게이트 질화물 트랜지스터 및 그 제조 방법
- 专利标题(英):Trench Gate Nitride Transistor and Manufacturing Method thereof
- 专利标题(中):TRENCH GATE NITRIDE晶体管及其制造方法
- 申请号:KR1020130061554 申请日:2013-05-30
- 公开(公告)号:KR1020140140766A 公开(公告)日:2014-12-10
- 发明人: 타케야모토노부 , 이강녕 , 이관현 , 곽준식 , 정영도
- 申请人: 서울반도체 주식회사
- 申请人地址: 경기도 안산시 단원구 산단로***번길 **-** (원시동)
- 专利权人: 서울반도체 주식회사
- 当前专利权人: 서울반도체 주식회사
- 当前专利权人地址: 경기도 안산시 단원구 산단로***번길 **-** (원시동)
- 代理人: 특허법인에이아이피
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L21/335
A normally-off type nitride transistor of the present invention, the source electrode and the drain electrode; A channel forming a laminate comprising the nucleation layer, and epitaxially growing the high resistance side and the nitride-based semiconductor layers grown on the nucleation layer; Is formed on the channel forming the laminate, the switch semiconductor layer in which the partial region having a concave structure; Comprising a gate electrode disposed on the concave structure, the nucleation layer is a lower region of the gate electrode of the location in the lower region of the gate electrode, the high-resistance nitride-based semiconductor layer is grown with the epitaxial side that the low density TD of an area not characterized.
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/762 | ....电荷转移器件 |
----------------H01L29/778 | .....带有二维载流子气沟道的,如HEMT |