基本信息:
- 专利标题： 실리콘 융액면의 높이위치의 산출방법 및 실리콘 단결정의 인상방법 그리고 실리콘 단결정 인상장치
- 专利标题（英）：Method for calculating height position of silicon melt surface, method for drawing up monocrystalline silicon and device for drawing up monocrystalline silicon
- 专利标题（中）：用于计算硅胶表面高度位置的方法，用于绘制单晶硅的方法和用于绘制单晶硅的装置
- 申请号：KR1020147023071 申请日：2013-01-22
- 公开(公告)号：KR1020140129033A 公开(公告)日：2014-11-06
- 发明人： 마스다,나오키 , 야나기마치,타카히로
- 申请人： 신에쯔 한도타이 가부시키가이샤
- 申请人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人： 특허법인씨엔에스
- 优先权： JPJP-P-2012-034694 2012-02-21
- 国际申请： PCT/JP2013/000276 2013-01-22
- 国际公布： WO2013125157 2013-08-29
- 主分类号： C30B15/26
- IPC分类号： C30B15/26 ; C30B29/06
The present invention, when raising the CZ silicon single crystal, as a method to calculate a height position of the silicon melt surface, by using a CCD camera is installed at an angle with respect to the silicon single crystal fusion ring in the perimeter of the silicon melt and the silicon single crystal a first obtaining the crystal diameter and crystal size of the second measurement, using the two CCD cameras, each installed in parallel toward the opposite ends of the crystal diameter of the silicon single crystal of the first measurement from, crystal diameter and the second of the first from the order of the crystal size, and provides a method for calculating the height position of the silicon melt surface for calculating the height position of the silicon melt surface in the crucible in the silicon single crystal pulling. Accordingly, a method capable of more accurately calculating a height position of the silicon melt surface level of when the pulling up the silicon single crystal.
公开/授权文献:
- KR101901308B1 실리콘 융액면의 높이위치의 산출방법 및 실리콘 단결정의 인상방법 그리고 실리콘 단결정 인상장치 公开/授权日：2018-09-21