基本信息:
- 专利标题: 감소된 전류 밀집을 위한 바이폴라 접합 트랜지스터 구조 및 그 제조 방법
- 专利标题(英):Bipolar junction transistor structure for reduced current crowding and method of manufacturing the same
- 专利标题(中):用于减少电流冲击的双极性结型晶体管结构及其制造方法
- 申请号:KR1020147015775 申请日:2012-12-11
- 公开(公告)号:KR1020140102674A 公开(公告)日:2014-08-22
- 发明人: 청,린 , 아가월,아난트,쿠마르 , 류,세-형
- 申请人: 크리, 인코포레이티드
- 申请人地址: **** Silicon Drive Durham, NC ***** United States of America
- 专利权人: 크리, 인코포레이티드
- 当前专利权人: 크리, 인코포레이티드
- 当前专利权人地址: **** Silicon Drive Durham, NC ***** United States of America
- 代理人: 양영준; 백만기
- 优先权: US13/323,297 2011-12-12
- 国际申请: PCT/US2012/068924 2012-12-11
- 国际公布: WO2013090250 2013-06-20
- 主分类号: H01L29/732
- IPC分类号: H01L29/732 ; H01L21/331 ; H01L29/10 ; H01L29/06 ; H01L29/16
The present invention relates to a bipolar junction transistor (BJT) structure that significantly reduces the current density compared to a conventional BJT, improving the current gain. BJT includes a collector, a base region and an emitter. A base region formed over the collector and the base region comprises an intrinsic base region which extends over at least one external area of the base in order to provide at least one of the outer base region and the mesa. It is formed over the emitter mesa. BJT may be formed from, the various material systems such as silicon carbide (SiC) material system. In one embodiment, the emitters essentially emitter so that any part is not formed on the external base region of the emitter can be formed on the mesa. In general, directly adjacent to the inner base region angling the at least one external area of the base, but this is not essential.
公开/授权文献:
- KR101723277B1 감소된 전류 밀집을 위한 바이폴라 접합 트랜지스터 구조 및 그 제조 방법 公开/授权日:2017-04-04
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/72 | ....晶体管型器件,如连续响应于所施加的控制信号的 |
----------------H01L29/73 | .....双极结型晶体管 |
------------------H01L29/732 | ......纵向晶体管 |