基本信息:
- 专利标题： 기판 프로세싱 챔버 내의 기생 플라즈마의 기계적 억제
- 专利标题（英）：Mechanical suppression of parasitic plasma in substrate processing chamber
- 专利标题（中）：在基板加工室中机械等离子体的机械抑制
- 申请号：KR1020147013116 申请日：2012-08-29
- 公开(公告)号：KR1020140094542A 公开(公告)日：2014-07-30
- 发明人： 케일더글라스 , 오거스티니아크에드워드 , 리저칼 , 사브리모하메드
- 申请人： 노벨러스 시스템즈, 인코포레이티드
- 申请人地址： **** Cushing Parkway, Fremont, California ***** United States of America
- 专利权人： 노벨러스 시스템즈, 인코포레이티드
- 当前专利权人： 노벨러스 시스템즈, 인코포레이티드
- 当前专利权人地址： **** Cushing Parkway, Fremont, California ***** United States of America
- 代理人： 특허법인인벤투스
- 优先权： US13/303,386 2011-11-23; US61/547,962 2011-10-17
- 国际申请： PCT/US2012/052789 2012-08-29
- 国际公布： WO2013058872 2013-04-25
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/31 ; H01L21/02
System for reducing the parasitic plasma in a semiconductor process, a plurality of dielectric layers and a first surface disposed between the electrode and the first surface. A first electrode surface and substantially has a different electric potential. A plurality of dielectric layers have a third between the second gap, and the last dielectric layer of the plurality of dielectric layers and a first surface between the dielectric layer adjacent ones of the first gap, a plurality of the dielectric layer between a dielectric layer of the electrode and plural dielectric layers It defines the gap. The number of dielectric layers and a plurality of the first gap, the size of the second gap and the third gap is selected to avoid parasitic plasma between the electrode and the first surface for a semiconductor process.
公开/授权文献:
- KR102019528B1 기판 프로세싱 챔버 내의 기생 플라즈마의 기계적 억제 公开/授权日：2019-09-06
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积 |