基本信息:
- 专利标题： 저항 변화 소자 및 그 제조 방법
- 专利标题（英）：Variable resistance element and method for producing same
- 专利标题（中）：可变电阻元件及其制造方法
- 申请号：KR1020147009144 申请日：2013-08-27
- 公开(公告)号：KR1020140068162A 公开(公告)日：2014-06-05
- 发明人： 후쿠다,나츠키 , 후쿠쥬,카즈노리 , 니시오카,유타카 , 수우,코우코우
- 申请人： 가부시키가이샤 아루박
- 申请人地址： 일본 가나가와껭 찌가사끼시 하기소노 ****반찌
- 专利权人： 가부시키가이샤 아루박
- 当前专利权人： 가부시키가이샤 아루박
- 当前专利权人地址： 일본 가나가와껭 찌가사끼시 하기소노 ****반찌
- 代理人： 특허법인 무한
- 优先权： JPJP-P-2012-194823 2012-09-05
- 国际申请： PCT/JP2013/005044 2013-08-27
- 国际公布： WO2014038152 2014-03-13
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L45/00
[Problem] The call without enlargement of the device size to provide variable resistance device to protect the device from excessive current. [MEANS FOR SOLVING PROBLEMS] variable in accordance with one embodiment of the invention the resistance element 1 is the lower electrode layer 3 and the upper electrode layer 6, a first metal oxide layer 51 and the second metal oxide layer (52 ) and, provided with a current-limiting layer (4). The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6 and has a first resistivity. The second metal oxide layer 52 is the liquid which is disposed between the first metal oxide layer 51 and the upper electrode layer (6) has a second resistivity higher than the first resistivity. Current confined layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51 is higher than the first resistivity it has a lower resistivity than the third and the second resistivity.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |