基本信息:
- 专利标题: 반도체 웨이퍼의 세정 방법
- 专利标题(英):Method for cleaning semiconductor wafer
- 专利标题(中):清洗半导体波形的方法
- 申请号:KR1020137033145 申请日:2012-05-11
- 公开(公告)号:KR1020140058439A 公开(公告)日:2014-05-14
- 发明人: 아베,타츠오 , 카바사와,히토시
- 申请人: 신에쯔 한도타이 가부시키가이샤
- 申请人地址: *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人: 신에쯔 한도타이 가부시키가이샤
- 当前专利权人: 신에쯔 한도타이 가부시키가이샤
- 当前专利权人地址: *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人: 특허법인씨엔에스
- 优先权: JPJP-P-2011-134809 2011-06-17
- 国际申请: PCT/JP2012/003090 2012-05-11
- 国际公布: WO2012172724 2012-12-20
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23G1/02
The present invention, HF cleaning, ozone water washing, in a washing step carried out in the order of the HF cleaning in the cleaning method of semiconductor wafer having at least one, at last the HF cleaning is performed on the in the cleaning method of the semiconductor wafer, the semiconductor wafer the surface is a cleaning method for a semiconductor wafer characterized in that some washed to leave a thickness on the semiconductor wafer surface without having to remove all of the oxide film formed by the ozone water cleaning. Accordingly, in the cleaning of semiconductor wafers, the cleaning method for a semiconductor wafer is provided which can reduce a metal impurity level and the particle level in the semiconductor wafer surface at the same time.
公开/授权文献:
- KR101774843B1 반도체 웨이퍼의 세정 방법 公开/授权日:2017-09-05
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |