基本信息:
- 专利标题： 단결정 제조장치 및 단결정 제조방법
- 专利标题（英）：Single crystal production apparatus and single crystal production method
- 专利标题（中）：单晶生产设备和单晶生产方法
- 申请号：KR1020137020713 申请日：2012-01-05
- 公开(公告)号：KR1020140020862A 公开(公告)日：2014-02-19
- 发明人： 이와사키,아츠시 , 소노카와,스스무 , 타케야스,시노부
- 申请人： 신에쯔 한도타이 가부시키가이샤
- 申请人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人： 특허법인씨엔에스
- 优先权： JPJP-P-2011-023687 2011-02-07
- 国际申请： PCT/JP2012/000020 2012-01-05
- 国际公布： WO2012108116 2012-08-16
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/32 ; C30B29/06
The present invention, as a crucible for holding the raw material melt, is disposed and possible supporting the crucible, and lifting cradle, crucible rotation shaft for rotating the crucible through the pedestal and, downstream of the furnace, surrounding the pedestal characterized in that to center the sleeve as a single crystal production apparatus according to the CZ method having a leakage hydrothermal receiver is installed, the outer peripheral portion of the pedestal, a groove for preventing the leakage from the furnace in which the raw material melt is dropped are installed two or more a single crystal production apparatus. Thereby, the raw material melt in the crucible in the accidents such as spilling the outer crucible, and even if the flow in accordance with the stand, reliably prevent metal parts of the stand downward melt reaches and advance the occurrence of damage to the equipment or injury the single crystal production device and the method for producing a single crystal can be suppressed are provided.
公开/授权文献:
- KR101756684B1 단결정 제조장치 및 단결정 제조방법 公开/授权日：2017-07-11