基本信息:
- 专利标题: 광전자 반도체 칩 및 이의 제조 방법
- 专利标题(英):Optoelectronic semiconductor chip and method for producing same
- 专利标题(中):光电子半导体芯片及其制造方法
- 申请号:KR1020137013281 申请日:2011-11-02
- 公开(公告)号:KR1020130108607A 公开(公告)日:2013-10-04
- 发明人: 사바틸매티아스 , 린코브알렉산더 , 코엘퍼크리스토퍼 , 슈트라스부르크마틴 , 본말름노윈
- 申请人: 오스람 옵토 세미컨덕터스 게엠베하
- 申请人地址: Leibnizstrasse *, ***** Regensburg, Germany
- 专利权人: 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人: 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人地址: Leibnizstrasse *, ***** Regensburg, Germany
- 代理人: 김태홍; 김성기
- 优先权: DE1020100512869 2010-11-12
- 国际申请: PCT/EP2011/069247 2011-11-02
- 国际公布: WO2012062635 2012-05-18
- 主分类号: H01L33/24
- IPC分类号: H01L33/24 ; H01L33/50 ; H01L33/20 ; H01L33/08
The present invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer stack (2) and the conversion layer (3). The semiconductor layer stack (2) including an active layer (2a) for forming copies. Conversion layer (3) is arranged on the radiation output surface 21 of the semiconductor layer stack (2), in which case the conversion layer (3) for converting at least a portion of the radiation emitted by the active layer (2a) to the other wave length Suitable. Copy output side of the semiconductor layer stack (2) 21, comprises a first nanostructure this case are arranged in the conversion layer (3) of the first nano-structure (4). In addition, a method of manufacturing such a semiconductor chip 10 is proposed.
公开/授权文献:
- KR101468348B1 광전자 반도체 칩 및 이의 제조 방법 公开/授权日:2014-12-03