基本信息:
- 专利标题： 광전 반도체 칩 및 광전 반도체 칩을 제조하기 위한 방법
- 专利标题（英）：Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
- 专利标题（中）：光电半导体芯片和生产光电半导体晶体管的方法
- 申请号：KR1020137022662 申请日：2012-02-07
- 公开(公告)号：KR1020130105931A 公开(公告)日：2013-09-26
- 发明人： 잉글칼 , 마우트마르쿠스 , 람멜스베르거스테파니 , 카스프작-자블록카안나
- 申请人： 오스람 옵토 세미컨덕터스 게엠베하
- 申请人地址： Leibnizstrasse *, ***** Regensburg, Germany
- 专利权人： 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人： 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人地址： Leibnizstrasse *, ***** Regensburg, Germany
- 代理人： 김태홍
- 优先权： DE10 2011 011 1409 2011-02-14
- 国际申请： PCT/EP2012/052053 2012-02-07
- 国际公布： WO2012110364 2012-08-23
- 主分类号： H01L33/44
- IPC分类号： H01L33/44 ; H01L33/36 ; H01L33/38
The present invention is a semiconductor body (2), and relates to an optoelectronic semiconductor chip with the semiconductor supporting member 7 of the body is disposed, in which case the semiconductor body, and an active region 20, the region is the first conductivity type 1 is disposed between the semiconductor layer 21 and the first conductivity type different from the first conductivity type of the second semiconductor layer (22). The first semiconductor layer is disposed on the side of the active region toward the support portion. The first semiconductor layer is connected to the first connection conductive layer 31 disposed between the support and the semiconductor body. The encapsulation layer is disposed between the first connection layer and the support, the encapsulating layer will protrude beyond the side (26) which at least partially limit the semiconductor body when viewed in plan view of the semiconductor chip. The invention also relates to a method for fabricating a plurality of optoelectronic semiconductor chip.
公开/授权文献:
- KR101549764B1 광전 반도체 칩 및 광전 반도체 칩을 제조하기 위한 방법 公开/授权日：2015-09-02