基本信息:
- 专利标题： 광전 반도체 소자
- 专利标题（英）：Optoelectronic semiconductor component
- 专利标题（中）：光电子半导体元件
- 申请号：KR1020127031826 申请日：2011-06-10
- 公开(公告)号：KR1020130105300A 公开(公告)日：2013-09-25
- 发明人： 람헨요한 , 라체츠다피트 , 갈마이어한스-크리슈토프 , 그뢰츠슈테판 , 예레빅지몬
- 申请人： 오스람 옵토 세미컨덕터스 게엠베하
- 申请人地址： Leibnizstrasse *, ***** Regensburg, Germany
- 专利权人： 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人： 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人地址： Leibnizstrasse *, ***** Regensburg, Germany
- 代理人： 김태홍
- 优先权： DE10 2010 024 8649 2010-06-24
- 国际申请： PCT/EP2011/059738 2011-06-10
- 国际公布： WO2011160968 2011-12-29
- 主分类号： H01L33/62
- IPC分类号： H01L33/62 ; H01L33/54 ; H01L33/46 ; H01L33/48
In at least one embodiment of the optoelectronic semiconductor element (1), the optoelectronic semiconductor element (1) comprises at least one optoelectronic semiconductor chip 3 attached to the carrier 2 and the carrier upper surface 20. Further, the semiconductor element (1) has at least one cover for mounting on at least one of the bonding wires 4, and the main radiation side (30) for electrical contact with the semiconductor chip 3 protrudes beyond the bonding wire (4) and a body (5). At least one glob top 6 is a lateral direction surrounding the semiconductor chip 3, leads to the main emitting side (30) of at least the semiconductor chip (3). A bonding wire (4) is completely covered by the reflective glob top (6) with a completely or the cover body 5 by the reflection glob top (6).
公开/授权文献:
- KR101833471B1 광전 반도체 소자 公开/授权日：2018-02-28