基本信息:
- 专利标题： 단결정 성장장치 및 그 성장방법
- 专利标题（英）：Apparatus of growing for single crystal
- 专利标题（中）：单晶生长装置
- 申请号：KR1020110060338 申请日：2011-06-21
- 公开(公告)号：KR1020120140535A 公开(公告)日：2012-12-31
- 发明人： 김동운 , 박종세 , 장봉희 , 이동용
- 申请人： 코닝정밀소재 주식회사
- 申请人地址： 충청남도 아산시 탕정면 만전당길 **
- 专利权人： 코닝정밀소재 주식회사
- 当前专利权人： 코닝정밀소재 주식회사
- 当前专利权人地址： 충청남도 아산시 탕정면 만전당길 **
- 代理人： 김선민
- 主分类号： C30B29/20
- IPC分类号： C30B29/20 ; C30B11/00 ; C30B15/10 ; C30B15/20
摘要：
PURPOSE: An apparatus and method for growing a single crystal are provided to reduce power consumption by shortening a cycle of a single crystal growing process. CONSTITUTION: A preheating unit(110) preheats a single crystal seed and raw materials inputted to a crucible and receives the crucible. A growing unit(120) receives the crucible from the preheating unit and grows a single crystal by horizontally moving the crucible for solidification after the raw materials and the single crystal seed are partially melt. An annealing unit(130) anneals the single crystal by receiving the crucible from the growing unit. A cooling unit(140) cools the single crystal by receiving the crucible from the annealing unit.
摘要（中）：
目的：提供用于生长单晶的装置和方法，以通过缩短单晶生长过程的循环来降低功耗。 构成：预热单元（110）预热单晶种子和输入坩埚的原料并接收坩埚。 生长单元（120）从预热单元接收坩埚，并且在原料和单晶种子部分熔融之后，通过水平移动坩埚进行固化，生长单晶。 退火单元（130）通过从生长单元接收坩埚来退火单晶。 冷却单元（140）通过从退火单元接收坩埚来冷却单晶。