基本信息:
- 专利标题： 모서리 방출 반도체 레이저
- 专利标题（英）：Edge emitting semiconductor laser
- 专利标题（中）：边缘发射半导体激光
- 申请号：KR1020127013742 申请日：2010-08-25
- 公开(公告)号：KR1020120092643A 公开(公告)日：2012-08-21
- 发明人： 라우어,크리스티안 , 고-메즈-이그레시아스,알바로
- 申请人： 오스람 옵토 세미컨덕터스 게엠베하
- 申请人地址： Leibnizstrasse *, ***** Regensburg, Germany
- 专利权人： 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人： 오스람 옵토 세미컨덕터스 게엠베하
- 当前专利权人地址： Leibnizstrasse *, ***** Regensburg, Germany
- 代理人： 김태홍
- 优先权： DE10 2009 051 3485 2009-10-30; DE10 2009 056 3873 2009-11-30
- 国际申请： PCT/EP2010/062416 2010-08-25
- 国际公布： WO2011051013 2011-05-05
- 主分类号： H01S5/10
- IPC分类号： H01S5/10 ; H01S5/042 ; H01S5/065 ; H01S5/20 ; H01S5/32 ; H01S5/40
There is provided an edge-emitting semiconductor laser including a semiconductor body 10, the semiconductor body is a waveguide region (4), and including the time the waveguide region 4 has a first waveguide layer (2A), second guiding layer ( 2B) and the laser beam (17) comprises an active layer (3) disposed between the first guiding layer (1A) and the second waveguide layer (2B) for the production, and of the waveguide region 4 comprises a first cladding layer (1A), and the in the growth direction of the semiconductor body 10 is disposed between the second cladding layer (1B) is located after the waveguide region (4), it is in the semiconductor body (10) emitted from the active layer (3) laser beams of the phase structure (6) for selecting a lateral mode is formed, and this time, a phase structure (6) includes at least one groove (7), the groove of the second cladding layer from the surface of the semiconductor body 10 ( 1B) extend in, and inside the second cladding layer (1B) consisting of a note of a semiconductor material different from the semiconductor material of the second cladding layer (1B) A first intermediate layer (11) are embedded, groove 7 is extended to the inside, at least in part, the first intermediate layer 11 from the surface 5 of the semiconductor body (10).
公开/授权文献:
- KR101772240B1 모서리 방출 반도체 레이저 公开/授权日：2017-08-28