基本信息:
- 专利标题: 단결정 실리콘 연속성장 시스템 및 방법
- 专利标题(英):System for continuous growing of monocrystalline silicon
- 申请号:KR1020127013413 申请日:2005-02-25
- 公开(公告)号:KR1020120076376A 公开(公告)日:2012-07-09
- 发明人: 벤더데이비드엘.
- 申请人: 솔라익스 인코퍼레이티드
- 申请人地址: **** Calle del Sol, Santa Clara, CA ***** U.S.A.
- 专利权人: 솔라익스 인코퍼레이티드
- 当前专利权人: 솔라익스 인코퍼레이티드
- 当前专利权人地址: **** Calle del Sol, Santa Clara, CA ***** U.S.A.
- 代理人: 김명신; 이동기; 박장규
- 优先权: US10/789,638 2004-02-27
- 国际申请: PCT/US2005/006058 2005-02-25
- 国际公布: WO2005084225 2005-09-15
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B29/06 ; H01L21/02
The present invention relates to an improved system based on a Czochralski method for continuously growing a single crystal ingot, a low aspect ratio, including a larger diameter and substantially flat crucible, and the crucible is an optionally surrounding the crystal ware included, and a larger diameter, low aspect ratio crucible, and substantially removing the convective flow, which reduces the oxygen content in the final single crystal silicon ingot. Individually level-controlled silicon pre-melt chamber to provide a continuous supply of molten silicon in the growth crucible determines impression effectively eliminate the need for the crucible rising system of the vertical during processing, corresponding to cross the plurality of heaters are molten below the crucible heat form the zone and the heat output of the heater is separately controlled to provide optimal heat distribution in the crystal / molten metal interface across the molten metal for improved crystal growth, the plurality of impression chamber is provided for the continuous processing and efficiency characterized in that.
公开/授权文献:
- KR101279756B1 단결정 실리콘 연속성장 시스템 및 방법 公开/授权日:2013-07-04