基本信息:
- 专利标题: 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를 위한 시스템 및 공정
- 专利标题(英):System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
- 专利标题(中):用于高密度,低能量等离子体增强蒸气相外延的系统和方法
- 申请号:KR1020127009425 申请日:2006-02-28
- 公开(公告)号:KR1020120054093A 公开(公告)日:2012-05-29
- 发明人: 본캐널한스
- 申请人: 에피스피드 에스.에이.
- 申请人地址: Technoparkstrasse *, CH-**** Zurich Switzerland
- 专利权人: 에피스피드 에스.에이.
- 当前专利权人: 에피스피드 에스.에이.
- 当前专利权人地址: Technoparkstrasse *, CH-**** Zurich Switzerland
- 代理人: 황의만
- 优先权: US60/657,208 2005-02-28
- 国际申请: PCT/IB2006/000421 2006-02-28
- 国际公布: WO2006097804 2006-09-21
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
Apparatus and process for rapidly deposited epitaxially compound semiconductor layer comprises a plasma generation device of a high-density low-energy plasma for taxi inhen seudeu epitaxial vapor. The process is, in one step, provides for the combined gas and one or more non-metal elements of the metal vapor in the deposition chamber. Since then, the gases causes highly activated in the presence of a low-density, high-energy plasma. A metal vapor and a highly active gas reacting at the same time, by the reaction result (reaction product) on the heated substrate to a support portion (support) communicating with the immersion in the plasma deposition to form a semiconductor layer on the substrate. The process eliminates the carbon, particularly suitable for epitaxial growth of nitride semiconductor on the growth rate of the large area substrate temperature of less than 1000 ℃ and up to 10nm / s on a silicon substrate. This step is required because not even the carbon-containing gas, the gas does not require to release hydrogen, no toxic carrier or reactant gases, environment-friendly.
公开/授权文献:
- KR101358966B1 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를 위한 시스템 및 공정 公开/授权日:2014-02-21
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/20 | ....半导体材料在基片上的沉积,例如外延生长 |