基本信息:
- 专利标题： 유기 박막 트랜지스터의 제조 방법
- 专利标题（英）：Method of making an organic thin film transistor
- 专利标题（中）：制造有机薄膜晶体管的方法
- 申请号：KR1020117027194 申请日：2010-04-13
- 公开(公告)号：KR1020120029387A 公开(公告)日：2012-03-26
- 发明人： 쿠글러토마스
- 申请人： 캠브리지 디스플레이 테크놀로지 리미티드
- 申请人地址： Unit ** Cardinal Park, Cardinal Way, Godmanchester, Cambridgeshire, PE** *XG, United Kingdom
- 专利权人： 캠브리지 디스플레이 테크놀로지 리미티드
- 当前专利权人： 캠브리지 디스플레이 테크놀로지 리미티드
- 当前专利权人地址： Unit ** Cardinal Park, Cardinal Way, Godmanchester, Cambridgeshire, PE** *XG, United Kingdom
- 代理人： 제일특허법인
- 优先权： GB09065871 2009-04-16
- 国际申请： PCT/GB2010/000739 2010-04-13
- 国际公布： WO2010119243 2010-10-21
- 主分类号： H01L51/40
- IPC分类号： H01L51/40 ; H01L29/786
The present invention, further comprising: prior to depositing the organic semiconductor, seeding the surface outside the channel region with at least one crystallized region; Surface evaporation line for depositing a solution of an organic semiconductor onto the seeded surface, and a channel region of organic semiconductor starts to form a crystalline domain in the crystallization area or each crystallization region, at which time a determination domain or each decision domain in progress across the channel region in a direction which is determined by the steps of growing from the crystallization portion; And an organic thin film by application of energy surface evaporation line direction and including the step of adjusting the determined domain or direction and rate of growth of each crystal domain across by controlling the travel speed across the channel region from at least one crystallized region outside the channel region a method of manufacturing a transistor.