基本信息:
- 专利标题： 용융금속으로부터 박형 반도체 물체를 제조하는 방법 및 장치
- 专利标题（英）：Methods and apparatus for making thin semiconductor bodies from molten material
- 专利标题（中）：用于制造薄膜半导体体的方法和装置
- 申请号：KR1020117021651 申请日：2010-03-09
- 公开(公告)号：KR1020110139226A 公开(公告)日：2011-12-28
- 发明人： 삭스에마뉴엘엠. , 월리스리처드엘. , 한추에어릭티. , 로렌츠아담엠. , 허델슨지.디.스티븐 , 존크자크랄프
- 申请人： 1366 테크놀로지 인코포레이티드
- 申请人地址： *-* Preston Court Bedford MA ***** United States of America
- 专利权人： 1366 테크놀로지 인코포레이티드
- 当前专利权人： 1366 테크놀로지 인코포레이티드
- 当前专利权人地址： *-* Preston Court Bedford MA ***** United States of America
- 代理人： 황의만
- 优先权： US61/209,582 2009-03-09; US61/224,730 2009-07-10; US61/237,965 2009-08-28
- 国际申请： PCT/US2010/026639 2010-03-09
- 国际公布： WO2010104838 2010-09-16
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C30B11/00 ; C30B15/30 ; C30B19/06 ; C30B28/04 ; C30B29/06 ; B29C33/44
Applying a pressure differential across the mold sheet throughout is a semiconductor (e.g., silicon) wafer is formed thereon. The wafer is released when relieve the pressure differential. Mold sheet may be cold than melt. Heat is extracted substantially entirely through the thickness of the formed wafer. And liquid-solid interface is substantially parallel to the mold sheet. The temperature of the solidified solid are substantially uniform over the entire region in the width, so that the stress and dislocation density is lowered the higher the crystalline quality. Molded sheet is the gas flow through him. The melt contact with the top and the total area of the melt; Or in the middle irrespective of the horizontal or vertical position across the contact portion of the molded sheet and the melt; And the mold sheet may be introduced to the sheet as by immersion in the melt. Particle size may be controlled by a number of means.
公开/授权文献:
- KR101805096B1 용융금속으로부터 박형 반도체 물체를 제조하는 방법 및 장치 公开/授权日：2017-12-05
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |