基本信息:
- 专利标题: 폴리실라잔을 사용하는 리버스 톤 상의 형성을 위한 하드마스크 공정
- 专利标题(英):A hardmask process for forming a reverse tone image using polysilazane
- 专利标题(中):使用多晶硅形成反向色调图像的HARDMASK工艺
- 申请号:KR1020117018117 申请日:2009-03-30
- 公开(公告)号:KR1020110118781A 公开(公告)日:2011-11-01
- 发明人: 압달라데이빗제이 , 대멀랄프알 , 다카노유스케 , 리진 , 구로사와가즈노리
- 申请人: 메르크 파텐트 게엠베하
- 申请人地址: 독일 ***** 다름스타트 프랑크푸르터 스트라세 ***
- 专利权人: 메르크 파텐트 게엠베하
- 当前专利权人: 메르크 파텐트 게엠베하
- 当前专利权人地址: 독일 ***** 다름스타트 프랑크푸르터 스트라세 ***
- 代理人: 김태홍; 김진회
- 优先权: US12/368,720 2009-02-10
- 国际申请: PCT/IB2009/005145 2009-03-30
- 国际公布: WO2010092420 2010-08-19
- 主分类号: G03F7/40
- IPC分类号: G03F7/40 ; G03F7/26 ; H01L21/027 ; H01L21/033
The present invention is a) optionally, forming a foundation layer of organic light-absorbing on the substrate; b) not to form a coating of a photoresist over the layer; c) forming a photoresist pattern; d) polysilazane as a glass-coated to form a polysilazane coating on a photoresist pattern from the composition, wherein the polysilazane coating is poly further thicker than the photoresist pattern, silazane coating composition having a silicon / nitrogen polymer and an organic coating solvent steps, including; e) poly etching the polysilazane coating and removing the polysilazane coating revealed less than the height of at least the uppermost photoresist pattern; And f) dry etching the photoresist and the photoresist to remove the base layer below, and thus a photoresist, comprising the step of forming an opening in the bottom where the pattern is present, to a method for forming a reverse tone over device will be. The invention also relates to a microelectronic device made using the method and the product of the method.
公开/授权文献:
- KR101628423B1 폴리실라잔을 사용하는 리버스 톤 상의 형성을 위한 하드마스크 공정 公开/授权日:2016-06-08