基本信息:
- 专利标题： 이중 플라즈마 이온 소오스
- 专利标题（英）：Double plasma ion source
- 专利标题（中）：双等离子源
- 申请号：KR1020107011288 申请日：2008-10-22
- 公开(公告)号：KR1020100100823A 公开(公告)日：2010-09-15
- 发明人： 디버길리오,윌리엄
- 申请人： 액셀리스 테크놀러지스, 인크.
- 申请人地址： 미합중국 매사츄세츠 (우편번호: *****) 비벌리 체리 힐 드라이브 ***
- 专利权人： 액셀리스 테크놀러지스, 인크.
- 当前专利权人： 액셀리스 테크놀러지스, 인크.
- 当前专利权人地址： 미합중국 매사츄세츠 (우편번호: *****) 비벌리 체리 힐 드라이브 ***
- 代理人： 이시용; 정현주
- 优先权： US60/981,576 2007-10-22
- 国际申请： PCT/US2008/012008 2008-10-22
- 国际公布： WO2009054966 2009-04-30
- 主分类号： H01J37/08
- IPC分类号： H01J37/08
Ion source is is disclosed, the ion source comprises a first plasma chamber 102 and the second comprises a plasma chamber 116, the first plasma chamber 102 accommodating the plasma generating part 104 and the first gas by having a first gas inlet 122 to the plasma generation 104 part and the first gas is to interact to generate a first plasma in the first plasma chamber 102, the first plasma chamber 102 further define an opening 114 for extracting electrons from said first plasma, said second plasma chamber 116 and a second gas inlet (124) for receiving the second gas , opening 114 in fluid communication with said first plasma chamber 102 and hayeoseo further define an opening 117 for receiving the electrons extracted from said first plasma chamber, the electron and the second gas is the second interaction to generate a second plasma in the plasma chamber 116, and the second plasma chamber 116 is further formed an extraction opening 120 for extracting the ions from the second plasma.
公开/授权文献:
- KR101562785B1 이중 플라즈마 이온 소오스 公开/授权日：2015-10-23
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01J | 放电管或放电灯 |
| ------H01J37/00 | 有把物质或材料引入使受到放电作用的结构的电子管,如为了对其检验或加工的 |
| --------H01J37/02 | .零部件 |
| ----------H01J37/04 | ..电极装置及与产生或控制放电的部件有关的装置，如电子光学装置，离子光学装置 |
| ------------H01J37/08 | ...离子源；离子枪 |