基本信息:
- 专利标题: 반도체 웨이퍼용 래핑 후 세정 방법 및 장치
- 专利标题(英):Post-lapping cleaning process and apparatus for semiconductor wafer
- 专利标题(中):后切割清洗工艺和半导体滤波器的设备
- 申请号:KR1020080111693 申请日:2008-11-11
- 公开(公告)号:KR1020100052831A 公开(公告)日:2010-05-20
- 发明人: 장유신 , 남병욱
- 申请人: 에스케이실트론 주식회사
- 申请人地址: **, Imsu-ro, Gumi-si, Gyeongsangbuk-do
- 专利权人: 에스케이실트론 주식회사
- 当前专利权人: 에스케이실트론 주식회사
- 当前专利权人地址: **, Imsu-ro, Gumi-si, Gyeongsangbuk-do
- 代理人: 송경근; 박보경
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/304
摘要:
PURPOSE: A post-lapping cleaning method and an apparatus for cleaning a semiconductor wafer using the same are provided to automate a first cleaning process, a second process and a drying process by transferring a wafer. CONSTITUTION: A lapping process is performed for a semiconductor wafer. A first cleaning process for the wafer is performed in a cleaning bath in which deionized water-contained cleaning solution(t1). A second cleaning process for the wafer is performed with a roll brush and a two-fluid nozzle(t2). The wafer is dried(t3). The first cleaning process and the second cleaning process and the dry process are automatically performed by transferring the wafer.
摘要(中):
目的:提供一种后研磨方法和使用其的半导体晶片的清洗装置,用于通过转印晶片来自动化第一清洗处理,第二处理和干燥处理。 构成:对半导体晶片进行研磨处理。 在清洗浴中进行晶片的第一清洗处理,其中去离子水包含的清洁溶液(t1)。 用辊刷和双流体喷嘴(t2)进行晶片的第二清洗处理。 将晶片干燥(t3)。 通过转移晶片来自动执行第一清洁处理和第二清洁处理以及干燥处理。
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |