基本信息:
- 专利标题： 저급 실리콘 재료를 정제하는 방법 및 그 장치
- 专利标题（英）：Process and apparatus for purifying low-grade silicon material
- 专利标题（中）：用于净化低等级硅材料的工艺和装置
- 申请号：KR1020097004910 申请日：2007-09-13
- 公开(公告)号：KR1020090053807A 公开(公告)日：2009-05-27
- 发明人： 르블랑도미니크 , 부와베르르네
- 申请人： 실리슘 비캔커 인코포레이티드
- 申请人地址： **** rue Yvon-Trudeau, Becancour, Quebec G*H *V*, Canada
- 专利权人： 실리슘 비캔커 인코포레이티드
- 当前专利权人： 실리슘 비캔커 인코포레이티드
- 当前专利权人地址： **** rue Yvon-Trudeau, Becancour, Quebec G*H *V*, Canada
- 代理人： 최규팔; 이은선
- 优先权： US60/844,372 2006-09-14
- 国际申请： PCT/CA2007/001646 2007-09-13
- 国际公布： WO2008031229 2008-03-20
- 主分类号： C01B33/037
- IPC分类号： C01B33/037 ; C01B33/12 ; C30B29/06 ; F27B7/06
Purification of the low-purity silicon material, and there is provided a method and apparatus to obtain a pure silicon material. The method includes providing a melting apparatus equipped with an oxy-fuel burner, to melt the low-purity silicon material in the melting apparatus and obtaining a melt of purity silicon material. Melting apparatus may comprise a rotary drum furnace, melting the low-purity silicon material may be carried out at a temperature in the range 1410 to 1700 ℃ ℃ under oxidizing or reducing atmosphere. Synthetic slag may be added to the molten material in the melting. Whereby high purity silicon melt of the material is discharged to the mold having an open top, a bottom wall insulation and an insulating side wall it may be separated from the slag. Once in the mold, and the melt of pure silicon material is subjected to a unidirectional solidification controlled, the purity is obtained a much higher solid polycrystalline silicon.