基本信息:
- 专利标题： 정전 빔 편향 스캐너 및 빔 편향 스캐닝 방법
- 专利标题（英）：Electrostatic beam deflection scanner and beam deflection scanning method
- 专利标题（中）：静电波束偏转扫描仪和光束偏转扫描方法
- 申请号：KR1020070051914 申请日：2007-05-29
- 公开(公告)号：KR1020070115670A 公开(公告)日：2007-12-06
- 发明人： 츠키하라미츠쿠니 , 가바사와미츠아키 , 아마노요시타카 , 마츠시타히로시
- 申请人： 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤
- 申请人地址： *-*, Osaki *chome, Shinagawa-ku, Tokyo Japan
- 专利权人： 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤
- 当前专利权人： 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤
- 当前专利权人地址： *-*, Osaki *chome, Shinagawa-ku, Tokyo Japan
- 代理人： 홍종원; 특허법인맥; 홍재일
- 优先权： JPJP-P-2006-00149281 2006-05-30
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
An electrostatic beam deflection scanner and a beam deflection scanning method are provided to improve the uniformity of implanting ions in a scan direction by restricting the zero electric field effect of an electrostatic beam deflection scanner. A pair of scanning electrodes(21A,21B) are arranged to be opposed to each other with the beam trajectory interposed therebetween. A pair of electric field correction electrodes(27,28) are arranged to extend in a direction perpendicular to an opposing direction of the pair of scanning electrodes and such that the beam trajectory is interposed therebetween. A positive and a negative potential are applied alternately to the scanning electrodes, and a correction voltage is constantly applied to the electric field correction electrodes. A correction electric field generated from the electric field correction electrodes is added to the beam passing between the scanning electrodes at the time of switching between the positive and the negative potential.
摘要（中）：
提供静电束偏转扫描器和光束偏转扫描方法，通过限制静电束偏转扫描器的零电场效应来提高沿扫描方向注入离子的均匀性。 一对扫描电极（21A，21B）被布置成彼此相对，其间插入光束轨迹。 一对电场校正电极（27,28）被布置成在垂直于该对扫描电极的相反方向的方向上延伸，并且使得光束轨迹插入其间。 交替地向扫描电极施加正电位和负电位，并且对电场校正电极不断施加校正电压。 在正电位和负电位之间切换时，将从电场校正电极产生的校正电场加到通过扫描电极的光束之间。
公开/授权文献:
- KR101354825B1 정전 빔 편향 스캐너 및 빔 편향 스캐닝 방법 公开/授权日：2014-01-22
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/263 | .....带有高能辐射的 |
| ------------------H01L21/265 | ......产生离子注入的 |