An apparatus for forming a transition metal oxide layer, a method for manufacturing a nonvolatile memory device using the same, and a nonvolatile memory device manufactured by the same are provided to increase the density of a layer, to have the smoother surface of the layer, and to improve adhesive strength between the layer and a substrate by forming the transition metal oxide layer whose physical and electrical characteristics are improved on the substrate. A substrate(56) is installed in a chamber(51). A transition metal oxide layer(55) is formed on the substrate. A target(58) is installed in the chamber. Transition metal particles(M) that are a first source material of the transition metal oxide layer toward the substrate are discharged from the target. An oxygen ion beam gun(60) accelerates oxygen ions that are a second source material of the transition metal oxide layer to irradiates them toward the substrate. An argon ion beam gun(65) irradiates accelerated argon ions toward the target in order to excite a discharge of the transition metal particles from the target.