The present invention relates to a method for manufacturing a vertical structure GaN-based LED element, in particular, and forming an insulating pattern defining a unit LED forming region of a predetermined size on a substrate, the substrate excluding the insulating pattern is formed area in forming a light emitting structure of the n-type structure with a gallium nitride-based semiconductor layer and the active layer and the p-type gallium nitride-based semiconductor layers are sequentially laminated, by removing the insulating pattern separating the light emitting structure into unit LED of a given size comprising the steps of, forming a p-type electrode, respectively on the separated light emitting structure, forming a structural support layer on the p-type electrode, exposing the n-type gallium nitride-based semiconductor layer by removing the substrate that step and to a method for manufacturing a vertical structure GaN-based LED element including forming each of the n-type electrode on the exposed n-type gallium nitride-based semiconductor layer. Vertical structure, a gallium nitride-based LED, an element isolation insulating pattern