基本信息:
- 专利标题： 원자층 증착법을 이용한 물질 형성방법
- 专利标题（英）：Method of forming material using atomic layer deposition
- 专利标题（中）：使用原子沉积法形成材料的方法
- 申请号：KR1020040042046 申请日：2004-06-09
- 公开(公告)号：KR1020050116928A 公开(公告)日：2005-12-14
- 发明人： 이정호 , 최정식 , 조준현 , 전상문
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 박영우
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
In substance formed using an atomic layer deposition method, in the general formula M [L1] x [L2] y (formula, M represents a metal, L1 and L2 is a halide-based, diketonates based, alkoxide-based, amino-based, alkoxy amine system, amidinyl carbonate-type or at least two, and more electronic ssangju dog multi tridentate ligands capable, L1 and L2 are different and, x, y are integers from each other, x + y is from 3 to 5, an integer) is an organic metal the compound is adsorbed chemicals on the substrate. Then, by introducing the reaction product containing the oxygen atom to an upper portion of the substrate, by the reaction of oxygen atoms in the metal element of the organometallic compound and the reaction product is chemically and separate the ligand of the organic metal compound to form a metal oxide. Therefore, it is possible to form a dielectric material having an excellent step cover sludge characteristic while having a high dielectric constant.
公开/授权文献:
- KR100581993B1 원자층 증착법을 이용한 물질 형성방법 公开/授权日：2006-05-22
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积 |