基本信息:
- 专利标题: EUV광원용 콜렉터
- 专利标题(英):Collector for euv light source
- 专利标题(中):EUV光源收集器
- 申请号:KR1020057018039 申请日:2004-04-07
- 公开(公告)号:KR1020050111619A 公开(公告)日:2005-11-25
- 发明人: 파틀로윌리엄엔. , 알고츠제이.마틴 , 블루멘스톡게리엠. , 바우어링노버트 , 어쇼브알렉산더아이. , 포멘코프이고르브이. , 판지아오지앙제이.
- 申请人: 사이머 엘엘씨
- 申请人地址: ***** Thornmint Court, San Diego, CA *****-****, U.S.A.
- 专利权人: 사이머 엘엘씨
- 当前专利权人: 사이머 엘엘씨
- 当前专利权人地址: ***** Thornmint Court, San Diego, CA *****-****, U.S.A.
- 代理人: 송봉식; 정삼영
- 优先权: US10/409,254 2003-04-08; US10/798,740 2004-03-10
- 国际申请: PCT/US2004/010972 2004-04-07
- 国际公布: WO2004092693 2004-10-28
- 主分类号: H01S3/10
- IPC分类号: H01S3/10
摘要:
A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism. The gas is maintained at a pressure that in part determines the selected energy peak and the stimulating mechanism may create an influx of ions of the sputtering ion material that creates a sputter density of atoms of the second material from the reflector surface that equals or exceeds the influx rate of the plasma debris atoms of the second material. A sputtering rate may be selected for a given desired life of the reflecting surface. The reflecting surface may be capped. The collector may comprise an elliptical mirror and a debris shield which may comprise radially extending channels. The first material may be molybdenum, the second lithium and the ion material may be helium. The system may have a heater to evaporate the second material from the reflecting surface. The stimulating mechanism may be connected to the reflecting surface between ignition times. The reflecting surface may have barrier layers. The collector may be a spherical mirror in combination with grazing angle of incidence reflector shells, which may act as a spectral filter by selection of the layer material for multi-layer stacks on the reflector shells. The sputtering can be in combination with heating, the latter removing the lithium and the former removing compounds of lithium, and the sputtering may be by ions produced in the plasma rather than excited gas atoms.
摘要(中):
公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎片的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。 气体保持在部分地决定所选择的能量峰值的压力下,并且刺激机构可以产生溅射离子材料的离子的流入,其从反射器表面产生第二材料的原子的溅射密度等于或超过 第二种材料的等离子体碎片原子的流入速率。 可以在反射表面的给定期望寿命期间选择溅射速率。 反射面可以被盖住。 收集器可以包括椭圆镜和可包括径向延伸通道的碎片屏蔽。 第一材料可以是钼,第二锂和离子材料可以是氦。 该系统可以具有从反射表面蒸发第二材料的加热器。 刺激机构可以在点火时间之间连接到反射表面。 反射表面可以具有阻挡层。 收集器可以是与入射反射器壳的掠射角组合的球面镜,其可以通过选择反射器壳体上的多层堆叠的层材料来充当光谱滤光器。 溅射可以与加热相结合,后者除去锂和前者除去锂的化合物,并且溅射可以是在等离子体中产生的离子而不是被激发的气体原子。
公开/授权文献:
- KR101042177B1 EUV광원용 콜렉터 公开/授权日:2011-06-16
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01S | 利用受激发射的器件 |
------H01S3/00 | 激光器,即利用受激发射对红外光、可见光或紫外线进行产生、放大、调制、解调或变频的器件 |
--------H01S3/10 | .控制辐射的强度、频率、相位、极化或方向,例如开关、选通、调制或解调 |