基本信息:
- 专利标题： 스핀처리장치
- 专利标题（英）：Spinning Apparatus
- 专利标题（中）：旋转加工设备
- 申请号：KR1020000041399 申请日：2000-07-19
- 公开(公告)号：KR1020010049817A 公开(公告)日：2001-06-15
- 发明人： 구로가와요시아끼 , 고바야시노부오
- 申请人： 시바우라 메카트로닉스 가부시끼가이샤
- 申请人地址： 일본국 가나가와켄 요코하마시 사카에쿠 가사마 *초메 *반 *고
- 专利权人： 시바우라 메카트로닉스 가부시끼가이샤
- 当前专利权人： 시바우라 메카트로닉스 가부시끼가이샤
- 当前专利权人地址： 일본국 가나가와켄 요코하마시 사카에쿠 가사마 *초메 *반 *고
- 代理人： 이재화
- 优先权： JP11-212157 1999-07-27
- 主分类号： H01L21/304
- IPC分类号： H01L21/304
摘要：
PURPOSE: To provide a spin processing apparatus which can preferably process the lower surface of a semiconductor wafer. CONSTITUTION: This spin processing apparatus for processing a lower surface of a semiconductor wafer by rotating the wafer and injecting a processing solution against the lower surface of the wafer includes a cup member, a rotor 12 provided within the cup to be driven rotatably, a holder member 22 provided on the rotor for removably holding a substrate, a nozzle head 46 having a processing solution nozzle 55 disposed at a position opposed to the lower surface of the wafer held by the holder member for ejecting a processing solution toward the lower surface of the wafer, a recess 51 made open to the upper surface of the nozzle head, and a solution discharge hole 53 which is made to communicate with the inner bottom of the recess for discharging the processing solution which drops into the recess.
摘要（中）：
目的：提供可以优选处理半导体晶片的下表面的旋转处理装置。 构成：用于通过旋转晶片并将处理溶液注入晶片的下表面来处理半导体晶片的下表面的旋转处理装置包括杯构件，设置在杯内以可旋转驱动的转子12，保持器 设置在转子上用于可移除地保持基板的构件22，具有处理溶液喷嘴55的喷嘴头46，该喷嘴头46设置在与由保持器构件保持的晶片的下表面相对的位置处，用于将处理溶液向下表面喷射 晶片，向喷嘴头的上表面开口的凹部51，以及与凹部的内底部连通而排出落入凹部的处理液的溶液排出孔53。
公开/授权文献:
- KR100654697B1 스핀처리장치 公开/授权日：2006-12-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |