基本信息:
- 专利标题： 초접합 반도체 소자
- 专利标题（英）：KR101932776B1 - Super-junction semiconductor device
- 申请号：KR1020130111894 申请日：2013-09-17
- 公开(公告)号：KR101932776B1 公开(公告)日：2018-12-27
- 发明人： 조문수 , 최창용 , 권순탁 , 전광연 , 김대병 , 우혁
- 申请人： 매그나칩 반도체 유한회사
- 申请人地址： 충북 청주시 흥덕구 향정동 *
- 专利权人： 매그나칩 반도체 유한회사
- 当前专利权人： 매그나칩 반도체 유한회사
- 当前专利权人地址： 충북 청주시 흥덕구 향정동 *
- 代理人： 김종선; 이형석
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
The invention superjunction that, the cell region and the junction termination area, transition area to the unit cell in the junction termination region than the size of the breakdown voltage due to the threshold electric field formed in the unit cell of the cell area, each area added between a semiconductor element of increasing the size of the breakdown voltage due to the threshold electric field wrong threshold electric field of each unit cell by ensuring that the breakdown voltage is formed in the ultimate device it can be made in the cell region to lower the electric field of another cell other than the cell area of the critical electric field it is possible to obtain a stable breakdown voltage by increasing the margin of his cell.
公开/授权文献:
- KR1020150032426A 초접합 반도체 소자 公开/授权日：2015-03-26
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |