基本信息:
- 专利标题: 성막 장치 및 성막 방법
- 专利标题(英):KR101926677B1 - Film forming device and film forming method
- 申请号:KR1020177006966 申请日:2016-02-24
- 公开(公告)号:KR101926677B1 公开(公告)日:2018-12-07
- 发明人: 아사카와,케이치로 , 하마구치,주니치 , 소노다,카즈히로 , 누마타,유키노부 , 코카제,유타카
- 申请人: 가부시키가이샤 알박
- 申请人地址: 일본 가나가와껭 지가사끼시 하기소노 ****반찌
- 专利权人: 가부시키가이샤 알박
- 当前专利权人: 가부시키가이샤 알박
- 当前专利权人地址: 일본 가나가와껭 지가사끼시 하기소노 ****반찌
- 代理人: 특허법인에이아이피
- 优先权: JPJP-P-2015-034740 2015-02-25
- 国际申请: PCT/JP2016/000989 2016-02-24
- 国际公布: WO2016136255 2016-09-01
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/3065 ; H01L21/285 ; C23C14/18 ; C23C14/34 ; C23C14/58 ; H01L21/768 ; H01J37/32 ; H01J37/34
By preventing the negative electric charge concentrated on the substrate an edge portion during the etching process, and - to provide a film forming apparatus capable of forming the good coverage of the thin film on the inner surface of the hole aspect ratio. Target 21 flow to the first power source (E1) and a stage that is turned a predetermined power to the vacuum chamber (1) is arranged, and the stage 4 for holding a substrate (W) in a vacuum chamber, the target thin film and a second power source (E2), to input the power, first by the film forming process and a second power supply for input by sputtering a target power to the target by the first power on the AC power in stages by forming a substrate a film-forming device (SM) according to the present invention can be an etching process for etching, the room chakpan (7c) on the periphery of the substrate is placed, the room for the top of the film forming surface side of the substrate held on the stage, and close to the substrate drive means for moving part 71 of the chakpan between etching position which is located upward from the film forming position, the upper surface of this portion of the room chakpan substrate that is positioned on the same plane as the substrate upper surface and down the shield (shield) (8) It includes a.
公开/授权文献:
- KR1020170041903A 성막 장치 및 성막 방법 公开/授权日:2017-04-17
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |