基本信息:
- 专利标题： 불휘발성 메모리 장치
- 专利标题（英）：KR101925018B1 - Non-volatile memory device
- 申请号：KR1020120065610 申请日：2012-06-19
- 公开(公告)号：KR101925018B1 公开(公告)日：2018-12-05
- 发明人： 권오석 , 주상현 , 김형준 , 박기태 , 신승환
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 특허법인 고려
- 主分类号： G11C16/34
- IPC分类号： G11C16/34 ; G11C16/26 ; G11C16/24
The present invention relates to a nonvolatile memory device. The non-volatile memory device of the present invention over a plurality of bit lines of memory cell array including a plurality of memory cells, and connected to said memory cell array, during selective page buffer circuit and a reading operation precharging to the plurality of bit lines the precharge voltage for 1 hour, and controls the page buffer circuit to be applied to the bit lines selected one of the plurality of bit lines, and verify read operation during the first time period is different from the second time the precharge voltage from the plurality for of the bit line to be applied to the selected bit line of the includes a control logic for controlling the page buffer circuit, said second time is provided based on the number of bit lines selected one of the plurality of bit lines during operation read verification do. Therefore, the non-volatile memory device of the present invention it is possible to reduce the program time by controlling the pre-charge time of a program verify voltage.
公开/授权文献:
- KR1020130142408A 불휘발성 메모리 장치 公开/授权日：2013-12-30
信息查询:
EspacenetIPC结构图谱:
| G | 物理 |
| --G11 | 信息存储 |
| ----G11C | 静态存储器 |
| ------G11C16/00 | 可擦除可编程序只读存储器 |
| --------G11C16/02 | .电可编程序的 |
| ----------G11C16/06 | ..辅助电路，例如，用于写入存储器的 |
| ------------G11C16/34 | ...编程状态的确定，例如，阈值电压、过编程或欠编程、保留 |