基本信息:
- 专利标题： 반도체 장치 및 그의 형성방법
- 专利标题（英）：KR101876305B1 - Semiconductor device and forming the same
- 申请号：KR1020130001223 申请日：2013-01-04
- 公开(公告)号：KR101876305B1 公开(公告)日：2018-07-11
- 发明人： 김윤해 , 강홍성 , 웅준걸 , 이윤석 , 최유신
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 특허법인 고려
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
A semiconductor device is disclosed. The semiconductor device is an active region and the having a device isolation film defining the active region substrate, a gate on the active region electrode, the gate electrodes both sides of the active region Sound / drain region, a buffer insulating film on the device isolation film, the buffer insulating film provided on the is formed on the gate electrode and the source / etch stop layer to an extension by the drain region, the first interlayer insulating film on the etch stop layer, and the first through the interlayer insulating film and the stationary stop the etch, and wherein the source / drain region and the each contact on the buffer insulating film, and includes a first contact and a second contact which are separated from each other.
公开/授权文献:
- KR1020140089673A 반도체 장치 및 그의 형성방법 公开/授权日：2014-07-16
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |