基本信息:
- 专利标题： 칩 저항기 및 그 제조 방법
- 专利标题（英）：KR101853170B1 - Chip Resistor and method for manufacturing the same
- 申请号：KR1020150183531 申请日：2015-12-22
- 公开(公告)号：KR101853170B1 公开(公告)日：2018-04-27
- 发明人： 박광현 , 한진만
- 申请人： 삼성전기주식회사
- 申请人地址： Maeyoung-Ro *** (Maetan-Dong), Youngtong-Gu, Suwon-Si, Gyeonggi-Do, Republic of Korea
- 专利权人： 삼성전기주식회사
- 当前专利权人： 삼성전기주식회사
- 当前专利权人地址： Maeyoung-Ro *** (Maetan-Dong), Youngtong-Gu, Suwon-Si, Gyeonggi-Do, Republic of Korea
- 代理人： 특허법인씨엔에스
- 主分类号： H01C1/142
- IPC分类号： H01C1/142 ; H01C17/00 ; H01C17/28
摘要：
본발명의일 실시예에따른칩 저항기는, 기판과, 기판의일면상에서로분리되도록배치된제1 및제2 전극과, 기판의일면상에배치되며제1 전극과제2 전극을전기적으로연결하는저항체와, 저항체의일면의일부를커버하는제1 보호층과, 저항체의일면의다른일부를커버하고제1 보호층의열전도성보다높은열전도성을가지는제2 보호층을포함할수 있다.
摘要（英）：
Chip resistor in accordance with one embodiment of the present invention is disposed on the first and second electrodes, one side of the substrate arranged to be separated from each other to one side of the substrate and the substrate electrically to the first electrode and the second electrode covering the connection resistance, and a different portion of the first protective layer, and a surface of the resistance to cover a part of the resistor surface to and may include a second protective layer having a higher thermal conductivity than the thermal conductivity of the first protective layer .
公开/授权文献:
- KR1020170074367A 칩 저항기 및 그 제조 방법 公开/授权日：2017-06-30